CV

General Information

Full Name Heng Wu
Title Associate Professor
Tel. +86+62753071
Add. 410 IMNE Building, Peking University, 5 Yiheyuan Road, Beijing, P.R. China

Education

  • 2016
    Ph.D.
    Purdue University, West Lafayette, IN, USA
    • Electrical and Computer Engineering
      • Thesis: Non-Silicon CMOS Devices and Circuits on High Mobility Channel Materials: Germanium and III-V
      • Advisor: Peide D. Ye

Work

  • 2023-Now
    Associate Professor
    School of Integrated Circuits, Peking University, China
    • Design Technology Co-Optimization (DTCO)
    • 3D Integration Architecture for Future
    • Novel Devices based on New Switching Mechanism/Materials
  • 2016-2022
    Research Staff Member
    IBM T.J. Watson Research Center
    • Semiconductor Technology Development
    • FEOL (Front End of Line) Device/Process Integration
    • Performance Step Up and Design/Technology Definition

Honors and Awards

  • 2020
    • IBM Master Inventor ~ IBM Cooperation
  • 2021
    • IEEE EDS Paul Rappaport Award ~ IEEE
  • 2018
    • Research division award ~ IBM Cooperation
  • 2020
    • Research alliance award ~ IBM Cooperation
  • 2016-2022
    • Invention achievement award ~ IBM Cooperation
  • 2015
    • Best paper in session award ~ SRC TECHON Conference
  • 2015
    • Best paper award ~ DRC Conference
  • 2014
    • Best paper award ~ IEEE VLSI Conference
  • 2013
    • Best paper award ~ IEEE SISC Conference

Selected Publications

  • Patents
  • Book Chapters
    • “Contact Resistance Reduction Approaches”, < An Introduction to Contact Resistance>, Nova Science Publishers, ISBN 1536185019, 9781536185010. Ch6
    • “Low-Resistance Contact Integration in CMOS Technology”, < An Introduction to Contact Resistance>, Nova Science Publishers, ISBN 1536185019, 9781536185010. Ch4
    • “Low-Resistance Contact Integration in CMOS Technology”, < An Introduction to Contact Resistance>, Nova Science Publishers, ISBN 1536185019, 9781536185010. Ch5
    • “Integration of Germanium into Modern CMOS Challenges and Breakthroughs”, < Advanced Nanoelectronics >, Post-Silicon Materials and Devices>, WILEY, 2018. 10.1002/9783527811861.ch4
    • “Performance Elements for Future CMOS Technology”, < Advances in Engineering Research. Volume 29> Nova Science Publishers, ISBN 978-1-53615-902-8, ch1
  • Invited Talks
    • More than 10 Invited Talks in SSDM 2015, National Semiconductor Physics Conference, CSTIC2023, CSTIC2025, ISEDA2025 et al
  • Conference & Journal Papers
    • More than 80 papers (including 12 Papers in IEDM/VLSI with 1st/Corresponding authorship

Professional Services

  • Committee: IEEE Semiconductor Manufacturing Committee, EDTM/ISQED/ICSICT/SSDM Conference Technical Committee
  • Reviewer: IEEE Electron Device Letters (EDL), IEEE Transaction on Device and Material Reliability (TDMR), IEEE Transaction on Electron Devices (TED), Journal of Electron Device Society, Journal of Nanomaterials, Chinese Physics B, Microelectronic Engineering, Journal of Applied Physics, Electronics, Micromachine, IEEE IEDM, Symposium on VLSI